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Filed by Genus, Inc. Pursuant to Rule 425
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Under the Securities Act of 1933
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And Deemed Filed Pursuant to Rule 14a-12
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Under the Securities Exchange Act of 1934
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Subject Company: Genus, Inc.
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Commission File No.: 000-17139
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Filed by Genus, Inc. Pursuant to Rule 425
|
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Under the Securities Act of 1933
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And Deemed Filed Pursuant to Rule 14a-12
|
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Under the Securities Exchange Act of 1934
|
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Subject Company: Genus, Inc.
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Commission File No.: 000-17139
|
[GRAPHIC]
AIXTRON
[LOGO]
TRANSACTION
ROADSHOW
02 July, 2004
[LOGO]
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[LOGO]
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[LOGO]
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[LOGO]
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1
Information About This Transaction
AIXTRON plans to file a registration statement on Form F-4
with the U.S. Securities and Exchange Commission, or SEC, which will include a
prospectus of AIXTRON and a proxy statement of Genus. Investors and security
holders are urged to read the proxy statement/prospectus regarding the business
combination transaction referenced in the foregoing information, when it
becomes available, because it will contain important information. The proxy statement/prospectus will be filed
with the SEC by AIXTRON. Investors and security holders may obtain a free copy
of the proxy statement/prospectus (when it becomes available) and other
documents filed by AIXTRON and Genus with the SEC at the SECs website at
www.sec.gov. The proxy
statement/prospectus (when it is available) and these other documents may also
be obtained for free from AIXTRON or Genus by directing a request to AIXTRON
Investor Relations at Kackertstr.15-17, 52072 Aachen, +39 241 8909 444 or Genus
Investor Relations at 1139 Karlstad Drive, Sunnyvale, California 94089,
telephone (408) 747-7120.
2
Participants in this Transaction
Aixtron and its directors and executive officers may be
deemed to be participants in the solicitation of proxies from the shareholders
of Genus in connection with the merger.
Information regarding the special interests of these directors and
executive officers in the merger will be included in the proxy
statement/prospectus of Aixtron and Genus described herein.
Genus and its directors and executive officers may be deemed
to be participants in the solicitation of proxies from the shareholders of
Genus in connection with the merger.
Information regarding the special interests of these directors and
executive officers in the merger transaction described herein will be included
in the proxy statement/prospectus of Aixtron and Genus described herein. Additional information regarding these
directors and executive officers is also included in Genus proxy statement for
its 2004 Annual Meeting of Shareholders, which was filed with the U.S.
Securities and Exchange Commission on or about April 28, 2004. This document is available free of charge at
the U.S. Securities and Exchange Commissions web site at www.sec.gov and from
Genus by contacting Genus Investor Relations at 1139 Karlstad Drive, Sunnyvale,
California 94089, telephone (408)
747-7120.
3
Forward Looking Information
This presentation may contain forward-looking statements
about the financial conditions, results of operations and earnings outlook of
Aixtron AG and Genus, Inc. within the meaning of the safe harbor provisions
of the Private Securities Litigation Reform Act of 1995. Words such as expects, anticipates,
intends, plans, believes, and estimates, and variations of these words
and similar expressions, identify these forward-looking statements. These statements are not guarantees of
future performance, involve certain risks, uncertainties and assumptions that
are difficult to predict, and are based upon assumptions as to future events
that may not prove accurate. Therefore,
actual outcomes and results may differ materially from what is expressed
herein. For example, if either of the
companies do not receive required shareholder approvals or fail to satisfy other
conditions to closing, the transaction will not be consummated. In any forward-looking statement in which
Aixtron or Genus expresses an expectation or belief as to future results, such
expectation or belief is expressed in good faith and believed to have a
reasonable basis, but there can be no assurance that the statement or
expectation or belief will result or be achieved or accomplished. Actual operating results may differ
materially from such forward-looking statements and are subject to certain risks,
including risks arising from: actual customer orders received by the companies;
the extent to which MOCVD and ALD technology is demanded by the market place;
the actual number of customer orders received by the companies; the timing of
final acceptance of products by customers; the financial climate and
accessibility of financing, general conditions in the thin film equipment
market and in the macro-economy; cancellations, rescheduling or delays in
product shipments; manufacturing capacity constraints; lengthy sales and
qualification cycles; difficulties in the production process; changes in
semiconductor industry growth; increased competition; delays in developing and
commercializing new products; general economic conditions being less favorable
than expected; the risk that the Aixtron and Genus businesses will not be
integrated successfully; costs related to the proposed merger; failure of the
Aixtron or Genus shareholders to approve the proposed merger or the failure of
other conditions to the proposed merger to be satisfied; and other factors,
including those set forth in Genuss filings with the U.S. Securities and
Exchange Commission, including its Annual Report on Form 10-K for its most
recent fiscal year and its most recent Quarterly Report on Form 10-Q,
particularly in the Risk Factors and Managements Discussion and Analysis of
Financial Condition and Results of Operations sections, and its Current
Reports on Form 8-K. The
forward-looking statements contained in this news release are made as of the
date hereof and Aixtron and Genus do not assume any obligation to (and
expressly disclaim any such obligation to) update the reasons why actual
results could differ materially from those projected in the forward-looking
statements. Any reference to the
Internet website of Aixtron or Genus is not an incorporation by reference of
such information in this presentation, and you should not interpret such a
reference as an incorporation by reference of such information.
4
AGENDA
Transaction Overview
AIXTRON Company Profile
GENUS Company Profile
Products / Markets
/ Customers
Financial Summary
Summary of Transaction Benefits
5
AIXTRON
Transaction Overview
6
Transaction Highlights
AIXTRON
to acquire Genus in stock-for-stock transaction
Exchange ratio of 0.510 AIXTRON ADRs for one
Genus share
Implied per share value of $3.61, implied
value of $143.2 MM
Premium of 6% over Genus closing price at
July 1
Premium of 16% over 30 day average prices of
both companies
GENUS shareholders to own 26.2% of combined
group
AIXTRON
and Genus to create a world leading position in nano deposition technologies
Accelerate next-generation entry and expand
customer footprint
Combined revenues of 142 million ($160 MM)
pro-forma for 2003
AIXTRON
to list ADRs (American Depository Receipts) on NASDAQ
Paul
Hyland CEO of combined group, Bill Elder to join AIXTRON Management Board
Transaction
requires approval of shareholders of AIXTRON and Genus
Planned
completion in Q4 of 2004
7
Transaction Rationale
Create a leading player in advanced
nano deposition technologies
Unique key enabling technology
partnership in Silicon/Compound convergence arena
Extend leadership in and accelerate
entry into multiple attractive growth markets driven by next-generation of
consumer and wireless products
Establish comprehensive, broad
product portfolio and compelling technology roadmap
Increase scale with broader strategic
customer base and global presence
Combine world class engineering teams
Consolidate financial strengths
8
AIXTRON
Company Profile
9
AIXTRON Empowering the Material
Revolution
Leading equipment supplier to the
compound semi industry
#1 in MOCVD ~ global market share in excess of 60%
Well diversified product and customer
portfolio
AIXTRON equipment used for LED, high-yield solar cells and
special laser diodes
More than 200 corporate and research institution customers
globally
Direct presence in all European, US and Asian markets
Strong financial performance
Revenues of 91 MM ($103 MM) in 2003, 40% expected top-line growth for 2004
Strong
order back-log with visibility into 2005
5 consecutive quarters of growth in order intake and order
backlog
Gross margins historically and for Q1 2004 of >35%
10
Multipurpose Equipment: MOCVD
[GRAPHIC]
11
AIXTRON is Active in High
Growth Product Areas
AIXTRON
|
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[GRAPHIC]
|
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|
|
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|
|
|
|
Product Area
|
|
LED
lighting, signaling,
outdoor giant screen
|
|
Telecom/
Datacom
fiber optics
wireless
|
|
Consumer/
Optoelectronics
CD, DVD
Laserprinter
|
|
Silicon & Display
SiC
electronics
(Schottky diodes,
wireless)
SiGe/ Strained Si
functional integration
electronics, photonics
Ferro-/ Dielectrics
8Gbit DRAM smartcard
OLED
display, screen
|
|
|
|
|
|
|
|
|
|
2003 Revenues
|
|
67 MM
74%
|
|
6 MM
7%
|
|
13 MM
14%
|
|
5 MM
5%
|
|
|
|
|
|
|
|
|
|
2003 Order
Intake
|
|
58 MM
74%
|
|
5 MM
6%
|
|
3 MM
4%
|
|
13 MM
16%
|
|
|
|
|
|
|
|
|
|
Device Market
Growth Profile
|
|
24% CAGR between
2002 and 2006
|
|
251% CAGR between
2004 and 2007 for
GaN, 85% CAGR until
2006 for automotive
radar
|
|
217% CAGR between
2003 and 2005 for
GaN, 405 mm laser
diodes
|
|
Significant growth and
revenue diversification
expected from 2005
onwards
|
12
Estimated
equipment market sizes & development for main target segments
$ MM
[CHART]
13
Global
Market Shares, MOCVD Equipment
(%)
[CHART]
Emcores MOCVD equipment
business acquired by Veeco (Nov 3, 2003)
|
|
VLSI RESEARCH Inc. 2004
|
14
Industrial
Customer Base
LED
|
|
Datacom, Opto/Consumer
electronics
|
[LOGO]
|
|
[LOGO]
|
|
|
|
Oxides, OLEDs, others
|
|
|
[LOGO]
|
|
|
15
The
Network of AIXcellence
[GRAPHIC]
16
The
Network of Knowledge
[GRAPHIC]
17
AIXTRON
Core Strategies
Maintain
a pure play in core competency:
Deposition
technology engineering delivering customized system solutions for compound
semiconductor & complex materials
Technology
& market leadership:
Continuous
improvement of technology and market position
Diversification
of target applications:
Leverage
AIXTRON technology for new materials and new sectors creating additional growth
potential
Market
positioning:
Enabling
technology partner in emerging markets
Equity
strength:
Maintain
a strong Balance Sheet, Minimize risk and create value for our stakeholders
18
[LOGO]
Company Profile
19
Genus
Highlights
Leading provider
of next-generation atomic layer deposition (ALD) equipment to semiconductor and
data storage markets
ALD is a key
enabling technology for high performance semiconductors and next generation TFH
products
Large market
opportunity
Moving towards $1
billion market after 2008
4 of 5 largest
Thin Film Head manufacturers
3 out of 4 largest
DRAM manufacturers
Experienced
management, history of innovation and execution
100,000 sq. ft.
facility with annual production capacity of $250 MM
Revenue $57 MM in
2003
Revenue growth of
over 40% in 2003
20
Genus
targeted markets
SEMICONDUCTOR MARKETS
[GRAPHIC]
NON SEMICONDUCTOR MARKETS
21
Genus Positioning
Products and Market
Position
Semiconductor
ALD
Capacitor =
Critical for DRAM productivity improvements
Gate Stack/Flash =
Next generation industry logic requirements
CVD
More than 200
process modules designed into mass production at Samsung
Genus is sole
source to Samsung for word and bit line applications
Designated
Worlds Best CVD system at 300mm by Samsung
Non-Semiconductor
Thin Film Heads -
ALD in production
Flat Panel Display
Inkjet Printing
Devices
MEMS
(micro-electromechanical systems)
Photomasks (initial
system sold to University of Albany Sematech North)
Capacitor/ Non
Semiconductor/ Gate
Total Served
Markets: $49.5 MM (VLSI Data)
Genus Market
Penetration: $21.6 MM
[CHART]
22
ALD
Market Opportunity
US$ millions
ALD is a key
enabling technology for high performance semiconductors
Large Market
opportunity
Moving towards $1
billion market after 2008
Rapidly growing,
with a 67% CAGR from 2003-2008
[CHART]
Source: VLSI
Research 2004
23
AIXTRON - GENUS
Products/ Markets/ Customers
24
Faster
+ Better + Cheaper = Scaling
[CHART]
25
Critical
Driver for Scaling
ITRS Shrink Roadmap
[CHART]
The unique factor
that has made the semiconductor industry successful: Decreases in geometry
size have provided improved functionality at a reduced cost
However,
traditional scaling is starting to be effected by fundamental limits of the
materials constituting the building blocks of the planar CMOS process
26
Where
are Todays Nano Challenges?
Year of Production:
|
|
1999
|
|
2002
|
|
2005
|
|
2008
|
|
2011
|
|
2014
|
|
DRAM Half-Pitch [nm]:
|
|
180
|
|
130
|
|
100
|
|
70
|
|
50
|
|
35
|
|
Overlay Accuracy [nm]:
|
|
65
|
|
45
|
|
35
|
|
25
|
|
20
|
|
15
|
|
MPU Gate Length [nm]:
|
|
140
|
|
85-90
|
|
65
|
|
45
|
|
30-32
|
|
20-22
|
|
CD Control [nm]:
|
|
14
|
|
9
|
|
6
|
|
4
|
|
3
|
|
2
|
|
Tox (equivalent) [nm]:
|
|
1.9-2.5
|
|
1.5-1.9
|
|
1.0-1.5
|
|
0.8-1.2
|
|
0.6-0.8
|
|
0.5-0.6
|
|
Junction Depth [nm]:
|
|
42-70
|
|
25-43
|
|
20-33
|
|
16-26
|
|
11-19
|
|
8-13
|
|
Metal Cladding [nm]:
|
|
17
|
|
13
|
|
10
|
|
0
|
|
0
|
|
0
|
|
Inter-Metal Dielectric K:
|
|
3.5-4.0
|
|
2.7-3.5
|
|
1.6-2.2
|
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1.5
|
|
<1.5
|
|
<1.5
|
|
These challenges require substantial Material Engineering
solutions
ITRS, Intel 2002
27
Intels
View of the Strained Silicon & High-k
Introduction
Already emerging in marketplace
Process Name
|
|
P856
|
|
P858
|
|
Px60
|
|
P1262
|
|
P1264
|
|
P1266
|
|
P1268
|
|
P1270
|
|
1st Production
|
|
1997
|
|
1999
|
|
2001
|
|
2003
|
|
2005
|
|
2007
|
|
2009
|
|
2011
|
|
Process Generation
|
|
0.25mm
|
|
0.18mm
|
|
0.13mm
|
|
90
nm
|
|
65
nm
|
|
45
nm
|
|
32
nm
|
|
22
nm
|
|
Wafer Size (mm)
|
|
200
|
|
200
|
|
200/300
|
|
300
|
|
300
|
|
300
|
|
300
|
|
300
|
|
Inter-connect
|
|
Al
|
|
Al
|
|
Cu
|
|
Cu
|
|
Cu
|
|
Cu
|
|
Cu
|
|
?
|
|
Channel
|
|
Si
|
|
Si
|
|
Si
|
|
Strained
Si
|
|
Strained
Si
|
|
Strained
Si
|
|
Strained
Si
|
|
Strained
Si
|
|
Gate dielectric
|
|
SiO2
|
|
SiO2
|
|
SiO2
|
|
SiO2
|
|
SiO2
|
|
High-k
|
|
High-k
|
|
High-k
|
|
Gate electrode
|
|
Poly-silicon
|
|
Poly-silicon
|
|
Poly-silicon
|
|
Poly-silicon
|
|
Poly-silicon
|
|
Metal
|
|
Metal
|
|
Metal
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Introduction
targeted at this time
|
|
Subject to change
|
|
|
|
|
|
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|
|
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|
|
|
|
|
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|
|
|
Intel found a solution for High-k and metal
gate
Source: Intel 2003
28
Convergence
of Silicon/ Compound Semi
Strained Si*
|
|
|
|
GaN
|
|
|
|
|
|
SiGe/Ge
|
|
[GRAPHIC]
|
|
Transition
layer
|
|
|
|
|
|
Si wafer
|
|
|
|
Si wafer
|
Driven
by needs and growth of consumer electronics
Increase
the performance of Silicon (IT Chips)
Functional
integration: digital, wireless and photonics on one chip
performance
of III-V with Si cost and infrastructure
29
Opportunity
Window for Entry
Production Ramp-Up Model and Technology Node
[CHART]
30
Overview
of Market Segments Addressed Before and After the Merger
AIXTRONs current market penetration
Genus current market penetration
Potential upside markets
[GRAPHIC]
Others: TFH magnetic heads,
Pin-hole free OLED encapsulation layer, RF capacitors
31
Strength
of New Entity
Leading supplier
of enabling technology
Uniquely
positioned to enable scalability requirements for semiconductor industry
Core strengths in
material knowledge and nanoscale semiconductor processes
Multiple markets
provide stable growth platform
Comprehensive,
very competitive product portfolio in deposition equipment
Broad customer
base seeking stronger, fewer suppliers with ability to partner strategically/
align roadmaps
Enhanced critical
mass allowing a deeper customer penetration and continued investment in new
products
More than 20 years
successful track record of complex material deposition on an atomic level and
more than 60 years collective experience (AIXTRON, Genus, Thomas Swan)
32
Customer Impact
Customers seeking
fewer, broader, independent suppliers with strong technology portfolios and financial
strength to strategically align product roadmaps
Combined companies
will provide customers with a comprehensive product portfolio and compelling,
synergistic technology roadmap
Combination would
allow increased and/or accelerated penetration of key accounts
Increased scale
would allow for continued investment in new technologies aligned to strategic
customer needs
33
Integration
Plan
Aixtron
can build on a successful track record of previous transaction integrations:
Thomas Swan and Epigress
[CHART]
34
Product
Portfolio
|
|
Compound
|
|
|
|
|
|
|
|
Markets
|
|
Semiconductors
|
|
Silicon
|
|
Flat Panel
Displays
|
|
HDD &
MEMS
|
|
Products
|
|
|
|
ALD: StrataGem
|
|
|
|
ALD: StrataGem
|
|
|
|
|
|
[GRAPHIC]
|
|
|
|
|
|
|
|
|
|
[GRAPHIC]
|
|
|
|
[GRAPHIC]
|
|
[LOGO]
|
|
|
|
ALD
|
|
|
|
[GRAPHIC]
|
|
|
|
|
|
CVD: Lynx
|
|
|
|
|
|
|
|
|
|
[GRAPHIC]
|
|
|
|
ALD: StrataGem
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Products
|
|
MOCVD: G3, CCS
|
|
AVD: Tricent®
|
|
OVPD: Gen 1, 2
|
|
|
|
|
|
[GRAPHIC]
|
|
[GRAPHIC]
|
|
[GRAPHIC]
|
|
|
|
[LOGO]
|
|
|
|
|
|
|
|
|
|
|
|
SiC CVD
|
|
CVD:SiGe Tricent®
|
|
|
|
|
|
|
|
[GRAPHIC]
|
|
[GRAPHIC]
|
|
|
|
|
|
35
Near
Term Product Strategy - Integration of TriJet® into Existing ALD StrataGem®
Process Modules
[GRAPHIC]
|
+
|
[GRAPHIC]
|
=
|
|
Combination of unique TriJet® source
delivery system with Gs ALD, RAD and TMF single wafer expertise enables:
|
|
Faster switching cycles with higher doses
and therefore higher throughput and lower CoO.
|
Increasing
market share in Genus existing markets targeted in near term (12 months
prospective)
36
Concept
of New, Flexible Gate Stack and High-k Platform: Tricent® + Lynx® = TriLynx®
[GRAPHIC]
|
|
Combination of unique AVD, ALD & RTP technology
with well proven 300 mm cluster platform
|
|
Handler compatibility (Brooks) available
|
|
Accelerating time to market introduction
of AVD, ALD-based production platform
|
|
Large technological and engineering
synergies expected
|
37
Capital Investment Budget in 2004 of top 20 IDMs
2004
Rank
|
|
Company
|
|
Head
quarters
|
|
2003
|
|
2004
|
|
04/03 %
Change
|
|
|
|
|
|
|
|
($M)
|
|
($M
Budget)
|
|
|
|
1
|
|
Samsung
|
|
South Korea
|
|
3,550
|
|
4,100
|
|
15
|
%
|
2
|
|
Intel
|
|
U.S.
|
|
3,650
|
|
3,800
|
|
4
|
%
|
3
|
|
UMC Group
|
|
Taiwan
|
|
739
|
|
2,120
|
|
187
|
%
|
4
|
|
TSMC
|
|
Taiwan
|
|
1,080
|
|
2,000
|
|
85
|
%
|
5
|
|
SMIC
|
|
China
|
|
492
|
|
1,950
|
|
296
|
%
|
6
|
|
ST
|
|
Europe
|
|
1,221
|
|
1,600
|
|
31
|
%
|
7
|
|
Infineon
|
|
Europe
|
|
886
|
|
1,585
|
|
79
|
%
|
6
|
|
Sony
|
|
Japan
|
|
1,200
|
|
1,520
|
|
27
|
%
|
9
|
|
AMD
|
|
U.S.
|
|
586
|
|
1,500
|
|
156
|
%
|
10
|
|
Micron
|
|
U.S.
|
|
1,075
|
|
1,450
|
|
35
|
%
|
11
|
|
Toshiba
|
|
Japan
|
|
1,050
|
|
1,430
|
|
36
|
%
|
12
|
|
Renesas
|
|
Japan
|
|
800
|
|
1,400
|
|
75
|
%
|
13
|
|
TI
|
|
U.S.
|
|
800
|
|
1,300
|
|
63
|
%
|
14
|
|
Matsushita
|
|
Japan
|
|
500
|
|
1,230
|
|
146
|
%
|
16
|
|
NEC
|
|
Japan
|
|
850
|
|
1,200
|
|
41
|
%
|
16
|
|
Nanya
|
|
Taiwan
|
|
600
|
|
1,140
|
|
90
|
%
|
17
|
|
Hynix
|
|
South Korea
|
|
600
|
|
1,100
|
|
83
|
%
|
18
|
|
IBM
|
|
U.S.
|
|
850
|
|
925
|
|
9
|
%
|
19
|
|
Grace
|
|
China
|
|
575
|
|
800
|
|
39
|
%
|
20
|
|
Philips
|
|
Europe
|
|
343
|
|
730
|
|
113
|
%
|
|
Existing Genus silicon customers
|
|
|
|
Existing Aixtron Silicon Customers
|
|
|
|
Aixtron/ Genus non-silicon customers / collaboration
partners
|
Sources:
IC Insights, Company Reports
38
AIXTRON
Financial Summary
39
Pro-forma
Combined Revenues by Application %
Aixtron pre-transaction 2002
[CHART]
Total Revenues 151 MM ($142 MM)
Aixtron pre-transaction 2003
[CHART]
Total Revenues 91 MM ($103 MM)
PF-combined 2002
[CHART]
Total Revenues 193 MM ($182 MM)
PF-combined 2003
[CHART]
Total Revenues 142 MM ($160 MM)
40
Pro-forma Combined Group
Balance Sheet
million
31/12/2003
Assets
|
|
MM
|
|
$ MM
|
|
Cash and Equivalents
|
|
78.3
|
|
98.7
|
|
Other current assets
|
|
68.5
|
|
86.4
|
|
|
|
|
|
|
|
Fixed and other long-term assets
|
|
75.0
|
|
94.7
|
|
Total Assets
|
|
221.8
|
|
279.8
|
|
Total Liabilities
|
|
51.6
|
|
65.1
|
|
of which Financial Liabilities
|
|
4.6
|
|
5.8
|
|
|
|
|
|
|
|
Total Net Assets
|
|
170.2
|
|
214.7
|
|
|
|
|
|
|
|
Shareholders equity
|
|
170.2
|
|
214.7
|
|
|
|
|
|
|
|
Equity ratio
|
|
76.7
|
%
|
76.7
|
%
|
41
Synergy
Assessment
True Cost Savings
Mainly from
overlap in existing reps offices, e.g. in Korea or Japan
Cost Avoidance Benefits
AIXTRON avoids
market entry costs through Genus existing access to customers in these markets
Use of Genus
existing sales force
More efficient
access to new customers through existing Genus contacts
Cost avoidance in
R&D
Joint R&D
development programs
Reduced
requirement to hire and train R&D staff
Revenue Synergies
Development of new
hybrid technology through combination of ALD and AVD
Better access to
enlarged customer base (e.g. Samsung, Infineon)
Greater and
earlier adoption of ALD and hybrid technology as strengthened group
Efficiency gains
and scaling effect
Improved
purchasing power resulting in reduced material costs
More efficient
production through higher utilization rates
42
Transforming
Transaction
Aixtron will
acquire a US listing as part of this transaction
Selected Semiconductor Equipment Vendors
[CHART]
43
AIXTRON
[LOGO]
Summary of Transaction Benefits
44
Summary of Main Transaction
Benefits
Creates
a leading player in advanced nano deposition technologies
Credible
critical mass necessary to attract large key customers
Establishes
comprehensive, broad product portfolio and compelling technology roadmap
Will
lead to unique combined technology and advantage over competitive products,
potentially increasing market shares
Accelerates
entry and extended leadership in multiple attractive growth markets driven by
next generation of consumer products
Reduces
time to market and adds knowledge to AIXTRONs Silicon Business Unit,
allowing the business to accelerate and capitalize on the investments already
made
Increases
scale with broader strategic customer base and global presence
AIXTRONs
supply chain, thereby, mitigate AIXTRONs exposure to /US$ currency
Results
in strong financial position
45